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| PMBFJ620 Dual N-channel field-effect transistor Rev. 01 -- 11 May 2004 Product data sheet 1. Product profile 1.1 General description Two N-channel symmetrical junction field-effect transistors in a SOT363 package. CAUTION This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling. MSC895 1.2 Features s s s s Two field effect transistors in a single package Low noise Interchangeability of drain and source connections High gain. 1.3 Applications s AM input stage in car radios s VHF amplifiers s Oscillators and mixers. 1.4 Quick reference data Table 1: Per FET VDS VGSoff IDSS Ptot yfs drain-source voltage gate-source cut-off voltage drain current total power dissipation forward transfer admittance VDS = 10 V; ID = 1 A VGS = 0 V; VDS = 10 V Ts 90 C VDS = 10 V; ID = 10 mA -2 24 10 25 -6.5 60 190 V V mA mW mS Quick reference data Conditions Min Typ Max Unit Symbol Parameter Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 2. Pinning information Table 2: Pin 1 2 3 4 5 6 Discrete pinning information Description source (1) source (2) gate (2) drain (2) drain (1) gate (1) 1 2 3 SOT363 Simplified outline 6 5 4 Symbol 5 1 4 2 sym034 6 3 3. Ordering information Table 3: Ordering information Package Name PMBFJ620 Description plastic surface mounted package; 6 leads Version SOT363 Type number 4. Marking Table 4: PMBFJ620 [1] * = p: made in Hong Kong. * = t: made in Malaysia. * = W: made in China. Marking Marking code [1] A8* Type number 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 2 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per FET VDS VGSO VGDO IG Ptot Tstg Tj drain-source voltage gate-source voltage drain-gate voltage forward gate current (DC) total power dissipation storage temperature junction temperature Ts 90 C open drain open source -65 25 -25 -25 50 190 +150 150 V V V mA mW C C Parameter Conditions Min Max Unit 6. Thermal characteristics Table 6: Symbol Rth(j-s) Thermal characteristics Parameter Conditions [1] [1] Typ 315 160 Unit K/W K/W thermal resistance from junction single loaded to soldering points double loaded [1] Ts is the temperature at the soldering point of the gate pins, see Figure 1. 400 Ptot (mW) 300 (1) 001aaa742 200 (2) 100 0 0 50 100 150 Ts (C) 200 (1) Double loaded. (2) Single loaded. Fig 1. Power derating curve. 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 3 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 7. Static characteristics Table 7: Characteristics Tj = 25 C unless otherwise specified. Symbol Per FET V(BR)GSS VGSoff VGSS IDSS IGSS RDSon yfs yos gate-source breakdown voltage gate-source cut-off voltage gate-source forward voltage drain-source leakage current gate-source leakage current drain-source on-state resistance common source forward transfer admittance common source output admittance IG = -1 A; VDS = 0 V ID = 1 A; VDS = 10 V IG = 1 mA; VDS = 0 V VDS = 10 V; VGS = 0 V VGS = -15 V; VDS = 0 V VGS = 0 V; VDS = 100 mV ID = 10 mA; VDS = 10 V ID = 10 mA; VDS = 10 V -25 -2 24 10 50 -6.5 1 60 -1 250 V V V mA nA mS S Parameter Conditions Min Typ Max Unit 8. Dynamic characteristics Table 8: Characteristics Tj = 25 C unless otherwise specified. Symbol Per FET Ciss Crss gis gfs grs gos Vn input capacitance reverse transfer capacitance common source input conductance common source transfer conductance common source reverse conductance common source output conductance VDS = 10 V; VGS = -10 V; f =1 MHz VDS = 10 V; VGS = 0 V; Tamb = 25 C VDS = 0 V; VGS = -10 V; f = 1 MHz VDS = 10 V; ID = 10 mA; f = 100 MHz VDS = 10 V; ID = 10 mA; f = 450 MHz VDS = 10 V; ID = 10 mA; f = 100 MHz VDS = 10 V; ID = 10 mA; f = 450 MHz VDS = 10 V; ID = 10 mA; f = 100 MHz VDS = 10 V; ID = 10 mA; f = 450 MHz VDS = 10 V; ID = 10 mA; f = 100 MHz VDS = 10 V; ID = 10 mA; f = 450 MHz 3 6 1.3 200 3 13 12 -30 -450 150 400 6 5 2.5 pF pF pF S mS mS mS S S S S nV/Hz Parameter Conditions Min Typ Max Unit equivalent input noise voltage VDS = 10 V; ID = 10 mA; f = 100 Hz 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 4 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 50 IDSS (mA) 40 mcd220 20 yfs (mS) 16 mcd219 30 12 20 8 10 4 0 0 -1 -2 -3 -4 VGSoff (V) 0 0 -2 -4 -6 -8 VGSoff (V) VDS = 10 V; Tj = 25 C. VDS = 10 V; ID = 10 mA; Tj = 25 C. Fig 2. Drain current as a function of gate-source cut-off voltage; typical values. Fig 3. Common source forward transfer admittance as a function of gate-source cut-off voltage; typical values. mcd222 150 gos (S) mcd221 80 RDSon () 60 100 40 50 20 0 0 -1 -2 -3 VGSoff (V) -4 0 0 -1 -2 -3 -4 VGSoff (V) VDS = 10 V; ID = 10 mA; Tj = 25 C. VDS = 100 mV; VGS = 0 V; Tj = 25 C. Fig 4. Common-source output conductance as a function of gate-source cut-off voltage; typical values. Fig 5. Drain-source on-state resistance as a function of gate-source cut-off voltage; typical values. 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 5 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 40 ID (mA) 30 mcd217 VGS = 0 V 40 ID (mA) 30 mcd214 -0.5 V 20 -1 V 20 -1.5 V 10 -2 V -2.5 V 0 0 4 8 12 VDS (V) 16 0 -4 -3 -2 -1 VGS (V) 0 10 Tj = 25 C. VDS = 10 V; Tj = 25 C. Fig 6. Typical output characteristics. mcd224 Fig 7. Typical transfer characteristics. mcd223 4 Crs (pF) 3 10 Cis (pF) 8 6 2 4 1 2 0 -10 -8 -6 -4 -2 0 VGS (V) 0 -10 -8 -6 -4 -2 VGS (V) 0 VDS = 10 V; Tj = 25 C. VDS = 10 V; Tj = 25 C. Fig 8. Reverse transfer capacitance as a function of gate-source voltage; typical values. Fig 9. Input capacitance as a function of gate-source voltage; typical values. 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 6 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 103 ID (A) 102 mcd229 10 1 10-1 10-2 10-3 -2.5 -2.0 -1.5 -1.0 -0.5 VGS (V) 0 VDS = 10 V; Tj = 25 C. Fig 10. Drain current as a function of gate-source voltage; typical values. -104 IGSS (pA) -103 1 mA -102 100 A -10 ID = 10 mA mcd230 -1 IGSS -10-1 0 4 8 12 VDG (V) 16 Tj = 25 C. Fig 11. Gate current as a function of drain-gate voltage; typical values. 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 7 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 104 IGSS (pA) 103 mcd231 102 10 1 10-1 -25 25 75 125 Tj (C) 175 Fig 12. Gate current as a function of junction temperature; typical values. 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 8 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 100 gis, bis (mS) bis mcd228 mcd227 100 gfs, -bfs (mS) 10 gfs 10 gis 1 -bfs 0.1 10 100 f (MHz) 1000 1 10 100 f (MHz) 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 C. VDS = 10 V; ID = 10 mA; Tamb = 25 C. Fig 13. Input admittance as a function of frequency; typical values. mcd226 Fig 14. Forward transfer admittance as a function of frequency; typical values. mcd225 102 -brs, -grs (mS) 10 - brs 1 100 bos, gos (mS) 10 bos 10-1 - grs 1 gos 10-2 10 100 f (MHz) 1000 0.1 10 100 f (MHz) 1000 VDS = 10 V; ID = 10 mA; Tamb = 25 C. VDS = 10 V; ID = 10 mA; Tamb = 25 C. Fig 15. Reverse transfer admittance as a function of frequency; typical values. Fig 16. Output admittance as a function of frequency; typical values. 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 9 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 9. Package outline Plastic surface mounted package; 6 leads SOT363 D B E A X y HE vMA 6 5 4 Q pin 1 index A A1 1 e1 e 2 bp 3 wM B detail X Lp c 0 1 scale 2 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 1.1 0.8 A1 max 0.1 bp 0.30 0.20 c 0.25 0.10 D 2.2 1.8 E 1.35 1.15 e 1.3 e1 0.65 HE 2.2 2.0 Lp 0.45 0.15 Q 0.25 0.15 v 0.2 w 0.2 y 0.1 OUTLINE VERSION SOT363 REFERENCES IEC JEDEC EIAJ SC-88 EUROPEAN PROJECTION ISSUE DATE 97-02-28 Fig 17. Package outline. 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 10 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 10. Revision history Table 9: Revision history Release date 20040511 Data sheet status Product data Change notice Order number 9397 750 13006 Supersedes Document ID PMBFJ620_1 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 11 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 11. Data sheet status Level I II Data sheet status [1] Objective data Preliminary data Product status [2] [3] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). III Product data Production [1] [2] [3] Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status `Production'), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com 9397 750 13006 (c) Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 01 -- 11 May 2004 12 of 13 Philips Semiconductors PMBFJ620 Dual N-channel field-effect transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Static characteristics. . . . . . . . . . . . . . . . . . . . . 4 Dynamic characteristics . . . . . . . . . . . . . . . . . . 4 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Contact information . . . . . . . . . . . . . . . . . . . . 12 (c) Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 11 May 2004 Document order number: 9397 750 13006 Published in The Netherlands |
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